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IGW40N65F5

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IGW40N65F5 Image

The IGW40N65F5 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.60 to 2.10 V, DC Collector Current 46 to 74 A, Peak Collector Current 120 A, Gate Emitter Leakage Current 0.1 uA. More details for IGW40N65F5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW40N65F5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.60 to 2.10 V
  • DC Collector Current
    46 to 74 A
  • Peak Collector Current
    120 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    125 to 250 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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