IHW20N135R5

Note : Your request will be directed to Infineon Technologies.

IHW20N135R5 Image

The IHW20N135R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.65 to 1.95 V, DC Collector Current 20 to 40 A, Peak Collector Current 200 A, DC Forward Current 20 to 40 A. More details for IHW20N135R5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IHW20N135R5
  • Manufacturer
    Infineon Technologies
  • Description
    1350 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.65 to 1.95 V
  • DC Collector Current
    20 to 40 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    20 to 40 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1350 V
  • Power Dissipation
    144 to 288 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Inductive cooking, Inverterized microwave ovens, Resonant converters, Soft switching applications
  • RoHS Compliant
    Yes

Technical Documents

Latest IGBTs

View more products