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IKWH70N65WR6

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IKWH70N65WR6 Image

The IKWH70N65WR6 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.55 to 1.85 V, DC Collector Current 70 to 122 A, Peak Collector Current 210 A, DC Forward Current 22 to 37 A. More details for IKWH70N65WR6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKWH70N65WR6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.85 V
  • DC Collector Current
    70 to 122 A
  • Peak Collector Current
    210 A
  • DC Forward Current
    22 to 37 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    145 to 290 W
  • Package
    PG-TO247-3-HCC
  • Package Type
    Through Hole
  • Applications
    PFC. Welding, ZCS applications
  • RoHS Compliant
    Yes

Technical Documents
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