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IKP08N65H5

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IKP08N65H5 Image

The IKP08N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 11 to 18 A, Peak Collector Current 24 A, DC Forward Current 12 to 20 A. More details for IKP08N65H5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKP08N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    11 to 18 A
  • Peak Collector Current
    24 A
  • DC Forward Current
    12 to 20 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    35 to 70 W
  • Package
    PG-TO220-3
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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