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IKWH40N65WR6

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IKWH40N65WR6 Image

The IKWH40N65WR6 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.55 to 1.85 V, DC Collector Current 40 to 75 A, Peak Collector Current 120 A, DC Forward Current 11 to 20 A. More details for IKWH40N65WR6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKWH40N65WR6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.85 V
  • DC Collector Current
    40 to 75 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    11 to 20 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    78 to 175 W
  • Package
    PG-TO247-3-HCC
  • Package Type
    Through Hole
  • Applications
    PFC. Welding, ZCS applications
  • RoHS Compliant
    Yes

Technical Documents
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