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IKWH50N65WR6

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IKWH50N65WR6 Image

The IKWH50N65WR6 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.55 to 1.85 V, DC Collector Current 50 to 85 A, Peak Collector Current 150 A, DC Forward Current 14 to 24 A. More details for IKWH50N65WR6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKWH50N65WR6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.85 V
  • DC Collector Current
    50 to 85 A
  • Peak Collector Current
    150 A
  • DC Forward Current
    14 to 24 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    103 to 205 W
  • Package
    PG-TO247-3-HCC
  • Package Type
    Through Hole
  • Applications
    PFC. Welding, ZCS applications
  • RoHS Compliant
    Yes

Technical Documents
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