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IKW08N120CS7

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IKW08N120CS7 Image

The IKW08N120CS7 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.65 to 2 V, DC Collector Current 14 to 21 A, Peak Collector Current 24 A, DC Forward Current 12 to 18 A. More details for IKW08N120CS7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW08N120CS7
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2 V
  • DC Collector Current
    14 to 21 A
  • Peak Collector Current
    24 A
  • DC Forward Current
    12 to 18 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    53 to 106 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Industrial Drives, Industrial Power Supplies, Solar Inverters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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