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MIW50N65F

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MIW50N65F Image

The MIW50N65F from Micro Commercial Components is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.6 to 2.05 V, DC Collector Current 60 to 85 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.2 uA. More details for MIW50N65F can be seen below.

Product Specifications

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Product Details

  • Part Number
    MIW50N65F
  • Manufacturer
    Micro Commercial Components
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.05 V
  • DC Collector Current
    60 to 85 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    326 W
  • Package
    TO-247AB
  • Package Type
    Through Hole
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes

Technical Documents
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