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IKWH20N65WR6

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IKWH20N65WR6 Image

The IKWH20N65WR6 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 20 to 40 A, Peak Collector Current 60 A, DC Forward Current 10 to 17 A. More details for IKWH20N65WR6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKWH20N65WR6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    20 to 40 A
  • Peak Collector Current
    60 A
  • DC Forward Current
    10 to 17 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    70 to 140 W
  • Package
    PG-TO247-3-HCC
  • Package Type
    Through Hole
  • Applications
    PFC. Welding, ZCS applications
  • RoHS Compliant
    Yes

Technical Documents
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