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IKW50N65RH5

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The IKW50N65RH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 56 to 80 A, Peak Collector Current 200 A, DC Forward Current 22.8 to 33.7 A. More details for IKW50N65RH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW50N65RH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    56 to 80 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    22.8 to 33.7 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    152.5 to 305 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Industrial Power Supplies, Energy Generation, Energy Distribution, Infrastructure–Charge
  • RoHS Compliant
    Yes

Technical Documents
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