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IHW40N65R5

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IHW40N65R5 Image

The IHW40N65R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 40 to 80 V, Peak Collector Current 40 to 80 A, DC Forward Current 19 to 32 A. More details for IHW40N65R5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHW40N65R5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    40 to 80 V
  • Peak Collector Current
    40 to 80 A
  • DC Forward Current
    19 to 32 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    115 to 230 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Induction cooking, Inverterized microwave ovens, Resonant converters
  • RoHS Compliant
    Yes

Technical Documents
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