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IKA10N60T

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IKA10N60T Image

The IKA10N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 to 2.05 V, DC Collector Current 7.2 to 11.7 V, Peak Collector Current 7.2 to 11.7 A, DC Forward Current 7.4 to 11.9 A. More details for IKA10N60T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKA10N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.5 to 2.05 V
  • DC Collector Current
    7.2 to 11.7 V
  • Peak Collector Current
    7.2 to 11.7 A
  • DC Forward Current
    7.4 to 11.9 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    30 W
  • Package
    TO-220-3
  • Package Type
    Through Hole
  • Applications
    Washing Machine, Air Condition, Inverter and Variable Speed Drive
  • RoHS Compliant
    Yes

Technical Documents
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