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IKA15N65ET6

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IKA15N65ET6 Image

The IKA15N65ET6 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 11 to 17 A, DC Forward Current 14 to 24 A, Junction Temperature 175 Degree C. More details for IKA15N65ET6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKA15N65ET6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.90 V
  • DC Collector Current
    11 to 17 A
  • DC Forward Current
    14 to 24 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    17.6 to 35.3 W
  • Package
    TO-220FP-3
  • Package Type
    Through Hole
  • Applications
    Drives, GPD(general purpose drives) Major home appliances, Air conditioning, Other major home appliances Small home appliances, Other small home appliances
  • RoHS Compliant
    Yes

Technical Documents
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