1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKB10N60T

IKB10N60T

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKB10N60T Image

The IKB10N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.50 to 2.05 V, DC Collector Current 18 to 24 A, DC Forward Current 18 to 24 A, Junction Temperature 175 Degree C. More details for IKB10N60T can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKB10N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.50 to 2.05 V
  • DC Collector Current
    18 to 24 A
  • DC Forward Current
    18 to 24 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    110 W
  • Package
    D2PAK (TO-263-3)
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products