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IKB20N65EH5

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IKB20N65EH5 Image

The IKB20N65EH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 25 to 38 A, DC Forward Current 27 to 40 A, Junction Temperature 175 Degree C. More details for IKB20N65EH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKB20N65EH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    25 to 38 A
  • DC Forward Current
    27 to 40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    62.5 to 125 W
  • Package
    PG-TO263-3
  • Package Type
    Through Hole
  • Applications
    Energy Generation -Solar String Inverter -Solar Micro Inverter, Industrial Power Supplies -Industrial SMPS -Industrial UPS, Metal Treatment -Welding, Energy Distribution -Energy Storage, Infrastructure–Charge -Charger
  • RoHS Compliant
    Yes

Technical Documents
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