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IKD08N65ET6

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IKD08N65ET6 Image

The IKD08N65ET6 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 9 to 15 A, DC Forward Current 10 to 15 A, Junction Temperature 175 Degree C. More details for IKD08N65ET6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKD08N65ET6
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.90 V
  • DC Collector Current
    9 to 15 A
  • DC Forward Current
    10 to 15 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    23 to 47 W
  • Package
    DPAK (TO-252-3)
  • Package Type
    Through Hole
  • Applications
    Drives, GPD(general purpose drives) Major home appliances, Air conditioning, Other major home appliances Small home appliances, Other small home appliances
  • RoHS Compliant
    Yes

Technical Documents
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