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IKD10N60RC2

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IKD10N60RC2 Image

The IKD10N60RC2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -25 to 25 V, Saturated Collector Emitter Voltage 2 to 2.40 V, DC Collector Current 12.6 to 18.8 V, DC Forward Current 12.6 to 18.8 A, Gate Emitter Leakage Current 0.1 uA. More details for IKD10N60RC2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKD10N60RC2
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -25 to 25 V
  • Saturated Collector Emitter Voltage
    2 to 2.40 V
  • DC Collector Current
    12.6 to 18.8 V
  • DC Forward Current
    12.6 to 18.8 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    39.5 to 79 W
  • Package
    DPAK (TO-252-3)
  • Package Type
    Through Hole
  • Applications
    MajorHome, Appliances-Air Conditioning-Refrigerators, Drives-GPD(GeneralPurposeDrives)
  • RoHS Compliant
    Yes

Technical Documents
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