1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKD10N60RF

IKD10N60RF

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKD10N60RF Image

The IKD10N60RF from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.20 to 2.50 V, DC Collector Current 10 to 20 A, DC Forward Current 10 to 20 A, Junction Temperature 175 Degree C. More details for IKD10N60RF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKD10N60RF
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.20 to 2.50 V
  • DC Collector Current
    10 to 20 A
  • DC Forward Current
    10 to 20 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    150 W
  • Package
    DPAK (TO-252-3)
  • Package Type
    Through Hole
  • Applications
    Compressors, Pumps, Fans
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products