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IKP30N65H5

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IKP30N65H5 Image

The IKP30N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 35 to 55 V, Peak Collector Current 35 to 55 A, DC Forward Current 21 to 36 A. More details for IKP30N65H5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKP30N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    35 to 55 V
  • Peak Collector Current
    35 to 55 A
  • DC Forward Current
    21 to 36 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    90 to 188 W
  • Package
    TO-220-3
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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