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IKP39N65ES5

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IKP39N65ES5 Image

The IKP39N65ES5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.45 to 1.85 V, DC Collector Current 39 to 62 A, DC Forward Current 39 to 40 A, Junction Temperature 175 Degree C. More details for IKP39N65ES5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKP39N65ES5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.85 V
  • DC Collector Current
    39 to 62 A
  • DC Forward Current
    39 to 40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    94 to 188 W
  • Package
    TO-220-3
  • Package Type
    Through Hole
  • Applications
    Drives, Industrial Power Supplies -Industrial SMPS -Industrial UPS, Energy Generation -Solar String Inverter, Energy Distribution -Energy Storage, Infrastructure–Charge -Charger
  • RoHS Compliant
    Yes

Technical Documents
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