1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKQ120N60T

IKQ120N60T

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKQ120N60T Image

The IKQ120N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 to 2 V, DC Collector Current 120 to 160 A, DC Forward Current 120 to 160 A, Junction Temperature 175 Degree C. More details for IKQ120N60T can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKQ120N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.5 to 2 V
  • DC Collector Current
    120 to 160 A
  • DC Forward Current
    120 to 160 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    833 W
  • Package
    TO-247PLUS-3
  • Package Type
    Through Hole
  • Applications
    General purpose inverters, Uninterruptible power supplies, Motor drives, Medium to low switching frequency power converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products