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IKW15N120T2

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IKW15N120T2 Image

The IKW15N120T2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.2 V, DC Collector Current 15 to 30 V, Peak Collector Current 15 to 30 A, DC Forward Current 15 to 25 A. More details for IKW15N120T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW15N120T2
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.2 V
  • DC Collector Current
    15 to 30 V
  • Peak Collector Current
    15 to 30 A
  • DC Forward Current
    15 to 25 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    235 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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