1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKW30N60T

IKW30N60T

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKW30N60T Image

The IKW30N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.50 to 2.05 V, DC Collector Current 39 to 45 A, DC Forward Current 39 to 45 A, Junction Temperature 175 Degree C. More details for IKW30N60T can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKW30N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.50 to 2.05 V
  • DC Collector Current
    39 to 45 A
  • DC Forward Current
    39 to 45 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    187 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products