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IKZA50N65RH5

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The IKZA50N65RH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 56 to 80 V, Peak Collector Current 56 to 80 A, DC Forward Current 22.8 to 33.7 A. More details for IKZA50N65RH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKZA50N65RH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    56 to 80 V
  • Peak Collector Current
    56 to 80 A
  • DC Forward Current
    22.8 to 33.7 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    152.5 to 305 W
  • Package
    TO-247-4
  • Package Type
    Through Hole
  • Applications
    Industrial Power Supplies -Industrial SMPS -Industrial UPS, Energy Generation -Solar String Inverter, Energy Distribution -Energy Storage, Infrastructure–Charge -Charger
  • RoHS Compliant
    Yes

Technical Documents
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