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IRGB4062D

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IRGB4062D Image

The IRGB4062D from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.60 to 2.04 V, DC Collector Current 24 to 48 A, DC Forward Current 24 to 96 A, Junction Temperature 175 Degree C. More details for IRGB4062D can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRGB4062D
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.60 to 2.04 V
  • DC Collector Current
    24 to 48 A
  • DC Forward Current
    24 to 96 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    125 to 250 W
  • Package
    TO-220-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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