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IRGP4069D

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IRGP4069D Image

The IRGP4069D from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.60 to 2 V, DC Collector Current 50 to 76 A, DC Forward Current 50 to 140 A, Junction Temperature 175 Degree C. More details for IRGP4069D can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRGP4069D
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.60 to 2 V
  • DC Collector Current
    50 to 76 A
  • DC Forward Current
    50 to 140 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    134 to 268 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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