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SIGC08T65E

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SIGC08T65E Image

The SIGC08T65E from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.03 to 1.87 V, DC Collector Current 15 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.3 uA. More details for SIGC08T65E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIGC08T65E
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    2.86 x 2.82 mm
  • Saturated Collector Emitter Voltage
    1.03 to 1.87 V
  • DC Collector Current
    15 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.3 uA
  • Collector Emitter Voltage
    650 V
  • Package Type
    Die
  • Applications
    Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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