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SIGC186T170R3E

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SIGC186T170R3E Image

The SIGC186T170R3E from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.4 V, DC Collector Current 150 A, Junction Temperature -55 to 150 Degree C, Collector Emitter Voltage 1700 V. More details for SIGC186T170R3E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIGC186T170R3E
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.4 V
  • DC Collector Current
    150 A
  • Junction Temperature
    -55 to 150 Degree C
  • Collector Emitter Voltage
    1700 V
  • Package Type
    Die
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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