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SIGC25T120CS

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SIGC25T120CS Image

The SIGC25T120CS from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.5 to 3.6 V, DC Collector Current 15 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current 0.48 uA. More details for SIGC25T120CS can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIGC25T120CS
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    5.71 x 4.53 mm
  • Saturated Collector Emitter Voltage
    2.5 to 3.6 V
  • DC Collector Current
    15 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    0.48 uA
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Die
  • Applications
    drives, SMPS, resonant applications
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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