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IXBF9N160G

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IXBF9N160G Image

The IXBF9N160G from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 4.9 V, DC Collector Current 7 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for IXBF9N160G can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXBF9N160G
  • Manufacturer
    Littelfuse
  • Description
    1600 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    4.9 V
  • DC Collector Current
    7 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    1600 V
  • Power Dissipation
    70 W
  • Package
    I4 PAC
  • Package Type
    Through Hole
  • Applications
    switched mode power supplies, DC-DC converters, resonant converters, lamp ballasts, laser generators, x ray generators

Technical Documents
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