The APTGL475A120D3G from Microchip Technology Phase leg Trench and Field Stop IGBT Power Module that is ideal for welding converters, switched mode power supplies, uninterruptible power supplies, and motor control applications. It has a collector-emitter breakdown voltage of up to 1200 V, a saturated collector-emitter voltage of 1.8 V, and a gate-emitter voltage of ±20 V. This RBSOA-rated IGBT module has a continuous collector current of less than 610 A and a gate-emitter leakage current of up to 400 nA. It has a power dissipation of less than 2080 W. This SCSOA-rated IGBT incorporates Trench + Field Stop IGBT4 Technology, delivering a high-performance package with features such as low voltage drop, minimal leakage current, and soft recovery parallel diodes. It boasts a Kelvin emitter design for easy drive, ensuring stable and integrated performance. 

This IGBT is fortified with M6 power connectors, allows direct mounting to the heatsink (isolated package), and possesses low junction-to-case thermal resistance. This RoHS-compliant IGBT is available in a module that measures 108 x 31 mm.