CM1000DXP-24T

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CM1000DXP-24T Image

The CM1000DXP-24T from Mitsubishi Electric is a Dual Switch Half-Bridge IGBT Module that is ideal for AC motor control, motion/servo control, and power supply applications. It has a collector-to-emitter voltage of up to 1200 V, a saturated collector-to-emitter voltage of less than 1.75 V, and a gate-emitter voltage of ±20 V. This UL1557-certified IGBT has a DC collector current of up to 1000 A and a gate-emitter leakage current of less than 0.5 µA. It has a power dissipation of up to 5355 W. This RoHS-compliant IGBT integrates a Nickel-plated Copper base plate and Tin-plated pin terminals. It is available as a module that measures 137 x 110 x 106.4 mm.

Product Specifications

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Product Details

  • Part Number
    CM1000DXP-24T
  • Manufacturer
    Mitsubishi Electric
  • Description
    1200 V Dual Switch Half-Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    137 x 110 x 106.4 mm
  • Saturated Collector Emitter Voltage
    1.75 V
  • DC Collector Current
    1000 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.5 µA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    5355 W
  • Package Type
    Module
  • Applications
    AC Motor control, Motion servo control, Power supply
  • RoHS Compliant
    Yes

Technical Documents

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