1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Mitsubishi Electric
  6. CM150DY-24T

CM150DY-24T

Download Datasheet Request Quote

Note : Your request will be directed to Mitsubishi Electric.

CM150DY-24T Image

The CM150DY-24T from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 1.95 V, DC Collector Current 150 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for CM150DY-24T can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    CM150DY-24T
  • Manufacturer
    Mitsubishi Electric
  • Description
    1200 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.95 V
  • DC Collector Current
    150 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1610 W
  • Package Type
    Module
  • Applications
    AC Motor control, Motion servo control, Power supply
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products