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CM200DY-24NF

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The CM200DY-24NF from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 to 2.5 V, DC Collector Current 200 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for CM200DY-24NF can be seen below.

Product Specifications

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Product Details

  • Part Number
    CM200DY-24NF
  • Manufacturer
    Mitsubishi Electric
  • Description
    1200 V Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.5 V
  • DC Collector Current
    200 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1130 W
  • Package Type
    Module
  • Applications
    AC Moter control, Motion servo control
  • RoHS Compliant
    Yes

Technical Documents
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