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CM600DU-12NFH

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CM600DU-12NFH Image

The CM600DU-12NFH from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 2.7 V, DC Collector Current 600 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for CM600DU-12NFH can be seen below.

Product Specifications

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Product Details

  • Part Number
    CM600DU-12NFH
  • Manufacturer
    Mitsubishi Electric
  • Description
    600 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 2.7 V
  • DC Collector Current
    600 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    2350 W
  • Package Type
    Module
  • Applications
    Gradient amplifier, Indution heating, Power Supply
  • RoHS Compliant
    Yes

Technical Documents
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