Note : Your request will be directed to Mitsubishi Electric.
The CM75MX-12A from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, DC Collector Current 75 A, Gate Emitter Leakage Current 0.5 uA, Collector Emitter Voltage 600 V. More details for CM75MX-12A can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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