The CM75MXUBP-24T from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.6 to 2.15 V, DC Collector Current 75 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for CM75MXUBP-24T can be seen below.