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AFGB30T65SQDN

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AFGB30T65SQDN Image

The AFGB30T65SQDN from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 to 2.1 V, DC Collector Current 30 to 60 A, Peak Collector Current 120 A, DC Forward Current 20 to 40 A. More details for AFGB30T65SQDN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGB30T65SQDN
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.1 V
  • DC Collector Current
    30 to 60 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    20 to 40 A
  • Gate Emitter Leakage Current
    250 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    110 to 220 W
  • Package
    D2PAK
  • Package Type
    Surface Mount
  • Applications
    Automotive On Board Charger, Automotive DC/DC Converter for HEV
  • Qualification
    AEC-Q101

Technical Documents
View details on the manufacturer's website
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