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AFGHL40T65SPD

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AFGHL40T65SPD Image

The AFGHL40T65SPD from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.40 to 2.51 V, DC Collector Current 40 to 80 A, Peak Collector Current 120 A, DC Forward Current 20 to 40 A. More details for AFGHL40T65SPD can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGHL40T65SPD
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.40 to 2.51 V
  • DC Collector Current
    40 to 80 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    20 to 40 A
  • Gate Emitter Leakage Current
    250 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    134 to 267 W
  • Package
    TO-247-3L
  • Package Type
    Through Hole
  • Applications
    On-board Charger, Air Conditioner Compressor, PTC Heater, Motor Drivers, Other Automotive Power-Train Applications
  • Qualification
    AEC-Q101

Technical Documents
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