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STGP10H60DF

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STGP10H60DF Image

The STGP10H60DF from STMicroelectronics is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.5 to 1.7 V, DC Collector Current 10 to 20 A, DC Forward Current 10 to 20 A, Junction Temperature -55 to 175 Degree C. More details for STGP10H60DF can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGP10H60DF
  • Manufacturer
    STMicroelectronics
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.5 to 1.7 V
  • DC Collector Current
    10 to 20 A
  • DC Forward Current
    10 to 20 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    0.25 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    115 W
  • Package
    TO-220
  • Package Type
    Through Hole
  • Applications
    Motor control, UPS, PFC
  • RoHS Compliant
    Yes

Technical Documents
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