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AFGHL40T65SQ

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AFGHL40T65SQ Image

The AFGHL40T65SQ from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 to 2.1 V, DC Collector Current 40 to 80 A, Peak Collector Current 160 A, Gate Emitter Leakage Current 250 uA. More details for AFGHL40T65SQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGHL40T65SQ
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.1 V
  • DC Collector Current
    40 to 80 A
  • Peak Collector Current
    160 A
  • Gate Emitter Leakage Current
    250 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    119 to 239 W
  • Package
    TO-247-3L
  • Package Type
    Through Hole
  • Applications
    Automotive HEV-EV Onboard Chargers, Automotive HEV-EV DC-DC Converters, Totem Pole Bridgeless PFC, PTC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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