AFGHL75T65SQDC

Note : Your request will be directed to onsemi.

AFGHL75T65SQDC Image

The AFGHL75T65SQDC from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 to 2.1 V, DC Collector Current 75 to 80 A, Peak Collector Current 300 A, DC Forward Current 20 to 35 A. More details for AFGHL75T65SQDC can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AFGHL75T65SQDC
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.1 V
  • DC Collector Current
    75 to 80 A
  • Peak Collector Current
    300 A
  • DC Forward Current
    20 to 35 A
  • Gate Emitter Leakage Current
    250 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    188 to 375 W
  • Package
    TO-247-3LD
  • Package Type
    Through Hole
  • Applications
    Automotive, On & Off Board Chargers, DC-DC Converters, PFC, Industrial Inverter
  • Qualification
    AEC-Q101

Technical Documents

Latest IGBTs

View more products