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AFGHL75T65SQDT

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AFGHL75T65SQDT Image

The AFGHL75T65SQDT from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 to 2.1 V, DC Collector Current 75 to 80 A, Peak Collector Current 300 A, DC Forward Current 75 to 80 A. More details for AFGHL75T65SQDT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGHL75T65SQDT
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.1 V
  • DC Collector Current
    75 to 80 A
  • Peak Collector Current
    300 A
  • DC Forward Current
    75 to 80 A
  • Gate Emitter Leakage Current
    250 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    188 to 375 W
  • Package
    TO-247-3L
  • Package Type
    Through Hole
  • Applications
    Automotive HEV-EV Onboard Chargers, Automotive HEV-EV DC-DC Converters, Totem Pole Bridgeless PFC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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