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AFGY120T65SPD-B4

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AFGY120T65SPD-B4 Image

The AFGY120T65SPD-B4 from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.3 to 1.85 V, DC Collector Current 220 to 240 A, Peak Collector Current 378 A, DC Forward Current 188 to 240 A. More details for AFGY120T65SPD-B4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGY120T65SPD-B4
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.3 to 1.85 V
  • DC Collector Current
    220 to 240 A
  • Peak Collector Current
    378 A
  • DC Forward Current
    188 to 240 A
  • Gate Emitter Leakage Current
    40 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    441 to 882 W
  • Package
    TO-247-3LD
  • Package Type
    Through Hole
  • Applications
    Traction Inverter for HEV/EV, Auxiliary DC/AC Converters, Motor Drives, Other Power-Train Applications Requiring High Power Switch
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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