The FGAF40N60UF from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.3 V, DC Collector Current 20 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.1 to 0.1uA. More details for FGAF40N60UF can be seen below.
