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FGB40T65SP_F085

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FGB40T65SP_F085 Image

The FGB40T65SP_F085 from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, DC Collector Current 40 to 80 A, DC Forward Current 20 to 40 A, Junction Temperature -55 to 175 Degree C, Gate Emitter Leakage Current -0.4 to 0.4 uA. More details for FGB40T65SP_F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGB40T65SP_F085
  • Manufacturer
    onsemi
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • DC Collector Current
    40 to 80 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    267 W
  • Package
    D2PAK-3 / TO-263-2
  • Package Type
    Through Hole
  • Applications
    Onboard Charger, AirCon Compressor, PTC Heater, Motor Drivers, Other Automotive Power-train and Auxiliary Applications
  • RoHS Compliant
    Yes

Technical Documents
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