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FGD3N60UNDF

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FGD3N60UNDF Image

The FGD3N60UNDF from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 V, DC Collector Current 3 A, DC Forward Current 3 A, Junction Temperature -55 to 150 Degree C. More details for FGD3N60UNDF can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGD3N60UNDF
  • Manufacturer
    onsemi
  • Description
    600 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 V
  • DC Collector Current
    3 A
  • DC Forward Current
    3 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.01 to 0.01 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    60 W
  • Package
    DPAK-3 / TO-252-3
  • Package Type
    Through Hole
  • Applications
    Sewing Machine, CNC, home applliance, Moter Control
  • RoHS Compliant
    Yes

Technical Documents
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