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FGD4536TM

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FGD4536TM Image

The FGD4536TM from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.59 V, DC Collector Current 220 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -04 to 04 uA. More details for FGD4536TM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGD4536TM
  • Manufacturer
    onsemi
  • Description
    360 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.59 V
  • DC Collector Current
    220 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -04 to 04 uA
  • Collector Emitter Voltage
    360 V
  • Power Dissipation
    125 W
  • Package
    DPAK-3 / TO-252-3
  • Package Type
    Surface Mount
  • Applications
    PDP TV, Consumer Appliances
  • RoHS Compliant
    Yes

Technical Documents
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