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FGD5T120SH

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FGD5T120SH Image

The FGD5T120SH from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2.9 V, DC Collector Current 5 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.4 to 0.4 uA. More details for FGD5T120SH can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGD5T120SH
  • Manufacturer
    onsemi
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2.9 V
  • DC Collector Current
    5 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    69 W
  • Package
    DPAK-3 / TO-252-3
  • Package Type
    Through Hole
  • Applications
    Inrush current limitation, Lighting, Home appliance
  • RoHS Compliant
    Yes

Technical Documents
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