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FGH40N65UFD

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FGH40N65UFD Image

The FGH40N65UFD from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 V, DC Collector Current 40 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.4 to 0.4 uA. More details for FGH40N65UFD can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGH40N65UFD
  • Manufacturer
    onsemi
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    40 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    290 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Automotive Chargers, Converters, High Voltage Auxiliaries, Inverters, PFC, UPS
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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